SIHD2N80E-GE3 Praghsáil (USD) [139084pcs Stoc]
- 1 pcs$0.26593
- Cuid Uimhir:
- SIHD2N80E-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 800V 2.8A DPAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Thyristors - SCRanna, Thyristors - SCRanna - Modúil, Diodes - Rectifiers - Aonair, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe and Trasraitheoirí - JFETanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIHD2N80E-GE3 electronic components. SIHD2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHD2N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHD2N80E-GE3 Tréithe Táirge
Cuid Uimhir :
SIHD2N80E-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 800V 2.8A DPAK
Sraith :
E
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
2.8A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
19.6nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
315pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
62.5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D-PAK (TO-252AA)
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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