SQS407ENW-T1_GE3 Praghsáil (USD) [208654pcs Stoc]
- 1 pcs$0.17727
- Cuid Uimhir:
- SQS407ENW-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CH 30V PPAK 1212-8W.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Diodes - Rectifiers Bridge, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Rectifiers - Aonair, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Cuspóir Speisialta and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQS407ENW-T1_GE3 electronic components. SQS407ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS407ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS407ENW-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQS407ENW-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CH 30V PPAK 1212-8W
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
16A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10.8 mOhm @ 12A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
77nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4572pF @ 20V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
62.5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® 1212-8W
Pacáiste / Cás :
PowerPAK® 1212-8W
An nuacht is déanaí
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