VS-GB200TH120N Praghsáil (USD) [197pcs Stoc]
- 1 pcs$234.46046
- 12 pcs$216.03837
- Cuid Uimhir:
- VS-GB200TH120N
- Monaróir:
- Vishay Semiconductor Diodes Division
- Cur síos mionsonraithe:
- IGBT 1200V 360A 1136W INT-A-PAK.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers Bridge, Thyristors - SCRanna - Modúil, Trasraitheoirí - IGBTanna - Eagair, Transistors - Bipolar (BJT) - Aonair, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Aonair, Diodes - RF and Diodes - Rectifiers - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Semiconductor Diodes Division VS-GB200TH120N electronic components. VS-GB200TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB200TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB200TH120N Tréithe Táirge
Cuid Uimhir :
VS-GB200TH120N
Monaróir :
Vishay Semiconductor Diodes Division
Cur síos :
IGBT 1200V 360A 1136W INT-A-PAK
Sraith :
-
Stádas Cuid :
Active
Cineál IGBT :
-
Cumraíocht :
Half Bridge
Miondealú Astaire an Voltais - Bailitheoir (Max) :
1200V
Reatha - Bailitheoir (Ic) (Max) :
360A
Cumhacht - Max :
1136W
Vce (ar) (Max) @ Vge, Ic :
2.35V @ 15V, 200A
Atá ann faoi láthair - Cutoff an Bhailitheora (Max) :
5mA
Ionchur Capacitance (Cies) @ Vce :
14.9nF @ 25V
Ionchur :
Standard
NTC Teirmeastar :
No
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste / Cás :
Double INT-A-PAK (3 + 4)
Pacáiste Gléas Soláthraithe :
Double INT-A-PAK
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
-
VS-ETL015Y120H
Vishay Semiconductor Diodes Division
IGBT 1200V 22A 89W EMIPAK-2B. Rectifiers 15A Dbl Interleaved Boost Converter
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