BSZ180P03NS3EGATMA1 Praghsáil (USD) [365089pcs Stoc]
- 1 pcs$0.10131
- 5,000 pcs$0.09726
- Cuid Uimhir:
- BSZ180P03NS3EGATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET P-CH 30V 39.6A TSDSON-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Diodes - Zener - Aonair, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - IGBTanna - Aonair, Diodes - RF and Trasraitheoirí - IGBTanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSZ180P03NS3EGATMA1 electronic components. BSZ180P03NS3EGATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ180P03NS3EGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ180P03NS3EGATMA1 Tréithe Táirge
Cuid Uimhir :
BSZ180P03NS3EGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET P-CH 30V 39.6A TSDSON-8
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A (Ta), 39.5A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
6V, 10V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
3.1V @ 48µA
Muirear Geata (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±25V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2220pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.1W (Ta), 40W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TSDSON-8
Pacáiste / Cás :
8-PowerTDFN
An nuacht is déanaí
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