Cur síos :
GANFET 3 N-CH 100V 9BGA
Cineál FET :
3 N-Channel (Half Bridge + Synchronous Bootstrap)
Gné FET :
GaNFET (Gallium Nitride)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.7A, 500mA
Rds On (Max) @ Id, Vgs :
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V
Vgs (ú) (Max) @ Id :
2.5V @ 100µA, 2.5V @ 20µA
Muirear Geata (Qg) (Max) @ Vgs :
0.16nC @ 5V, 0.044nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
16pF @ 50V, 7pF @ 50V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
9-BGA (1.35x1.35)