NVMFSW6D1N08HT1G Praghsáil (USD) [125731pcs Stoc]
- 1 pcs$0.29418
- Cuid Uimhir:
- NVMFSW6D1N08HT1G
- Monaróir:
- ON Semiconductor
- Cur síos mionsonraithe:
- T8 80V 1 PART PROLIFERATI.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - Bipolar (BJT) - RF, Túistéirí - TRIACanna, Túistéirí - DIACs, SIDACanna, Diodes - Rectifiers Bridge, Trasraitheoirí - JFETanna, Diodes - Rectifiers - Aonair and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in ON Semiconductor NVMFSW6D1N08HT1G electronic components. NVMFSW6D1N08HT1G can be shipped within 24 hours after order. If you have any demands for NVMFSW6D1N08HT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFSW6D1N08HT1G Tréithe Táirge
Cuid Uimhir :
NVMFSW6D1N08HT1G
Monaróir :
ON Semiconductor
Cur síos :
T8 80V 1 PART PROLIFERATI
Sraith :
Automotive, AEC-Q101
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
80V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
17A (Ta), 89A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
5.5 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
4V @ 120µA
Muirear Geata (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2085pF @ 40V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3.8W (Ta), 104W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
5-DFN (5x6) (8-SOFL)
Pacáiste / Cás :
8-PowerTDFN, 5 Leads
An nuacht is déanaí
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