Cuid Uimhir :
SSM6L09FUTE85LF
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N/P-CH 30V 0.4A/0.2A US6
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
400mA, 200mA
Rds On (Max) @ Id, Vgs :
700 mOhm @ 200MA, 10V
Vgs (ú) (Max) @ Id :
1.8V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs :
-
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
20pF @ 5V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-TSSOP, SC-88, SOT-363
Pacáiste Gléas Soláthraithe :
US6