Cuid Uimhir :
SI4910DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 40V 7.6A 8-SOIC
Cineál FET :
2 N-Channel (Dual)
Drain to Voltage Source (Vdss) :
40V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.6A
Rds On (Max) @ Id, Vgs :
27 mOhm @ 6A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
32nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
855pF @ 20V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO