Cuid Uimhir :
BSC072N03LDGATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 30V 11.5A 8TDSON
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
11.5A
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
41nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3500pF @ 15V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerVDFN
Pacáiste Gléas Soláthraithe :
PG-TDSON-8 Dual