IPP60R299CPXKSA1 Praghsáil (USD) [27106pcs Stoc]
- 1 pcs$1.32210
- 10 pcs$1.19430
- 100 pcs$0.91062
- 500 pcs$0.70826
- 1,000 pcs$0.58685
- Cuid Uimhir:
- IPP60R299CPXKSA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 650V 11A TO-220.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Túistéirí - DIACs, SIDACanna, Thyristors - SCRanna, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Cuspóir Speisialta and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPP60R299CPXKSA1 electronic components. IPP60R299CPXKSA1 can be shipped within 24 hours after order. If you have any demands for IPP60R299CPXKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP60R299CPXKSA1 Tréithe Táirge
Cuid Uimhir :
IPP60R299CPXKSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 650V 11A TO-220
Sraith :
CoolMOS™
Stádas Cuid :
Not For New Designs
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
11A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
299 mOhm @ 6.6A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 440µA
Muirear Geata (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1100pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
96W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO220-3
Pacáiste / Cás :
TO-220-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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