SI4931DY-T1-GE3 Praghsáil (USD) [195156pcs Stoc]
- 1 pcs$0.18953
- 2,500 pcs$0.16019
- Cuid Uimhir:
- SI4931DY-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2P-CH 12V 6.7A 8SOIC.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Diodes - Rectifiers - Aonair and Trasraitheoirí - FETanna, MOSFETanna - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI4931DY-T1-GE3 electronic components. SI4931DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4931DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4931DY-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI4931DY-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2P-CH 12V 6.7A 8SOIC
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 P-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
12V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
6.7A
Rds On (Max) @ Id, Vgs :
18 mOhm @ 8.9A, 4.5V
Vgs (ú) (Max) @ Id :
1V @ 350µA
Muirear Geata (Qg) (Max) @ Vgs :
52nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
-
Cumhacht - Max :
1.1W
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SO
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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