Cuid Uimhir :
DMN2014LHAB-7
Monaróir :
Diodes Incorporated
Cur síos :
MOSFET 2N-CH 20V 9A 6-UDFN
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A
Rds On (Max) @ Id, Vgs :
13 mOhm @ 4A, 4.5V
Vgs (ú) (Max) @ Id :
1.1V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
16nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1550pF @ 10V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-UFDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
U-DFN2030-6 (Type B)