SI1926DL-T1-GE3 Praghsáil (USD) [575693pcs Stoc]
- 1 pcs$0.06425
- 3,000 pcs$0.06069
- Cuid Uimhir:
- SI1926DL-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 60V 0.37A SOT363.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Diodes - Zener - Sraith, Modúil Tiomána Cumhachta and Túistéirí - DIACs, SIDACanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SI1926DL-T1-GE3 electronic components. SI1926DL-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI1926DL-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI1926DL-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SI1926DL-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 60V 0.37A SOT363
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
370mA
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 340mA, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
1.4nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
18.5pF @ 30V
Cumhacht - Max :
510mW
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-TSSOP, SC-88, SOT-363
Pacáiste Gléas Soláthraithe :
SC-70-6 (SOT-363)
An nuacht is déanaí
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