Vishay Semiconductor Diodes Division - VS-GB100TH120U

KEY Part #: K6533233

VS-GB100TH120U Praghsáil (USD) [261pcs Stoc]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Cuid Uimhir:
VS-GB100TH120U
Monaróir:
Vishay Semiconductor Diodes Division
Cur síos mionsonraithe:
IGBT 1200V 200A 1136W INT-A-PAK.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - RF, Thyristors - SCRanna - Modúil, Trasraitheoirí - JFETanna, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - IGBTanna - Eagair and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
Buntáiste iomaíoch:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120U Tréithe Táirge

Cuid Uimhir : VS-GB100TH120U
Monaróir : Vishay Semiconductor Diodes Division
Cur síos : IGBT 1200V 200A 1136W INT-A-PAK
Sraith : -
Stádas Cuid : Active
Cineál IGBT : NPT
Cumraíocht : Half Bridge
Miondealú Astaire an Voltais - Bailitheoir (Max) : 1200V
Reatha - Bailitheoir (Ic) (Max) : 200A
Cumhacht - Max : 1136W
Vce (ar) (Max) @ Vge, Ic : 3.6V @ 15V, 100A
Atá ann faoi láthair - Cutoff an Bhailitheora (Max) : 5mA
Ionchur Capacitance (Cies) @ Vce : 8.45nF @ 20V
Ionchur : Standard
NTC Teirmeastar : No
Teocht Oibriúcháin : -40°C ~ 150°C (TJ)
Cineál Gléasta : Chassis Mount
Pacáiste / Cás : Double INT-A-PAK (3 + 4)
Pacáiste Gléas Soláthraithe : Double INT-A-PAK

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