IPN80R1K4P7ATMA1 Praghsáil (USD) [206252pcs Stoc]
- 1 pcs$0.17933
- 3,000 pcs$0.17688
- Cuid Uimhir:
- IPN80R1K4P7ATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CHANNEL 800V 4A SOT223.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Túistéirí - DIACs, SIDACanna, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - IGBTanna - Eagair, Diodes - RF and Modúil Tiomána Cumhachta ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPN80R1K4P7ATMA1 electronic components. IPN80R1K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R1K4P7ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN80R1K4P7ATMA1 Tréithe Táirge
Cuid Uimhir :
IPN80R1K4P7ATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CHANNEL 800V 4A SOT223
Sraith :
CoolMOS™ P7
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 70µA
Muirear Geata (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
250pF @ 500V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
7W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-SOT223
Pacáiste / Cás :
TO-261-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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