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  1. Baile
  2. Táirgí
  3. DRAM
  4. DDR4
  5. K4A4G165WE-BIWE

Samsung Semiconductor - K4A4G165WE-BIWE

KEY Part #: K7359586

[15824pcs Stoc]

    Cuid Uimhir:
    K4A4G165WE-BIWE
    Monaróir:
    Samsung Semiconductor
    Cur síos mionsonraithe:
    4 Gb 256M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: HBM Flarebolt, LPDDR5, MODULE, LPDDR4X, DDR4, GDDR6, GDDR5 and DDR3 ...
    Buntáiste iomaíoch:
    We specialize in Samsung Semiconductor K4A4G165WE-BIWE electronic components. K4A4G165WE-BIWE can be shipped within 24 hours after order. If you have any demands for K4A4G165WE-BIWE, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WE-BIWE Tréithe Táirge

    Cuid Uimhir : K4A4G165WE-BIWE
    Monaróir : Samsung Semiconductor
    Cur síos : 4 Gb 256M x 16 3200 Mbps 1.2 V -40 ~ 95 °C 96FBGA Mass Production
    Sraith : DDR4
    Dlús : 4 Gb
    Org. : 256M x 16
    Luas : 3200 Mbps
    voltage : 1.2 V
    Meán. : -40 ~ 95 °C
    pacáiste : 96FBGA
    Stádas Táirge : Mass Production

    An nuacht is déanaí

    Samsung Z-SSD SZ985
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    SSDs, DRAM and gaming: Unlocking a new level of performance
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    Speed for the next generation of mobile devices
    Samsung Enhances Functional Safety to its Automotive Semiconductors with ISO 26262 Certification
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
    Unlocking the Power of Cloud Computing
    B'fhéidir go mbeadh spéis agat freisin
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.

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