Cuid Uimhir :
IPI120N06S4H1AKSA2
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH TO262-3
Sraith :
Automotive, AEC-Q101, OptiMOS™
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
2.4 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id :
4V @ 200µA
Muirear Geata (Qg) (Max) @ Vgs :
270nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
21900pF @ 25V
Díscaoileadh Cumhachta (Max) :
250W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO262-3-1
Pacáiste / Cás :
TO-262-3 Long Leads, I²Pak, TO-262AA