Cuid Uimhir :
IPI65R099C6XKSA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 650V 38A TO-262
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
650V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
38A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 12.8A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 1.2mA
Muirear Geata (Qg) (Max) @ Vgs :
127nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2780pF @ 100V
Díscaoileadh Cumhachta (Max) :
278W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
PG-TO262-3-1
Pacáiste / Cás :
TO-262-3 Long Leads, I²Pak, TO-262AA