Toshiba Semiconductor and Storage - 2SK2009TE85LF

KEY Part #: K6397693

2SK2009TE85LF Praghsáil (USD) [498647pcs Stoc]

  • 1 pcs$0.07418

Cuid Uimhir:
2SK2009TE85LF
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 30V 0.2A SMINI.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - FETs, MOSFETs - RF and Túistéirí - TRIACanna ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

2SK2009TE85LF Tréithe Táirge

Cuid Uimhir : 2SK2009TE85LF
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 30V 0.2A SMINI
Sraith : -
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 200mA (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 2.5V
Rds On (Max) @ Id, Vgs : 2 Ohm @ 50MA, 2.5V
Vgs (ú) (Max) @ Id : 1.5V @ 100µA
Muirear Geata (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 70pF @ 3V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 200mW (Ta)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : SC-59-3
Pacáiste / Cás : TO-236-3, SC-59, SOT-23-3

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