SIA416DJ-T1-GE3 Praghsáil (USD) [306526pcs Stoc]
- 1 pcs$0.12067
- 3,000 pcs$0.11355
- Cuid Uimhir:
- SIA416DJ-T1-GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 11.3A SC70-6L.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Thyristors - SCRanna - Modúil, Thyristors - SCRanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - Zener - Sraith, Diodes - RF, Trasraitheoirí - Neamhfheidhmiú Inchláraithe and Trasraitheoirí - JFETanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SIA416DJ-T1-GE3 electronic components. SIA416DJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA416DJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA416DJ-T1-GE3 Tréithe Táirge
Cuid Uimhir :
SIA416DJ-T1-GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 100V 11.3A SC70-6L
Sraith :
TrenchFET®
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
11.3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
83 mOhm @ 3.2A, 10V
Vgs (ú) (Max) @ Id :
3V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
295pF @ 50V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3.5W (Ta), 19W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PowerPAK® SC-70-6 Single
Pacáiste / Cás :
PowerPAK® SC-70-6
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