Toshiba Semiconductor and Storage - SSM6J214FE(TE85L,F

KEY Part #: K6407560

SSM6J214FE(TE85L,F Praghsáil (USD) [885618pcs Stoc]

  • 1 pcs$0.04176

Cuid Uimhir:
SSM6J214FE(TE85L,F
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
X34 SMALL LOW ON RESISTANCE PCH.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Eagair, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - JFETanna, Thyristors - SCRanna, Modúil Tiomána Cumhachta and Transistors - FETs, MOSFETs - RF ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage SSM6J214FE(TE85L,F electronic components. SSM6J214FE(TE85L,F can be shipped within 24 hours after order. If you have any demands for SSM6J214FE(TE85L,F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM6J214FE(TE85L,F Tréithe Táirge

Cuid Uimhir : SSM6J214FE(TE85L,F
Monaróir : Toshiba Semiconductor and Storage
Cur síos : X34 SMALL LOW ON RESISTANCE PCH
Sraith : U-MOSVI
Stádas Cuid : Active
Cineál FET : P-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 30V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 3.6A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 1.8V, 10V
Rds On (Max) @ Id, Vgs : 50 mOhm @ 3A, 10V
Vgs (ú) (Max) @ Id : 1.2V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs : 7.9nC @ 4.5V
Vgs (Max) : ±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 560pF @ 15V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 500mW (Ta)
Teocht Oibriúcháin : 150°C
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : ES6
Pacáiste / Cás : SOT-563, SOT-666

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