Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET 2N-CH 30V 7A/11A HSML
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7A, 11A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 7A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
11.1nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
500pF @ 15V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-UDFN Exposed Pad
Pacáiste Gléas Soláthraithe :
HSML3030L10