[329pcs Stoc]
- Cuid Uimhir:
- SPB80N10L G
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 80A TO-263.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Zener - Sraith, Trasraitheoirí - IGBTanna - Modúil, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - FETs, MOSFETs - RF, Túistéirí - TRIACanna, Diodes - Rectifiers Bridge and Trasraitheoirí - FETs, MOSFETs - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies SPB80N10L G electronic components. SPB80N10L G can be shipped within 24 hours after order. If you have any demands for SPB80N10L G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SPB80N10L G Tréithe Táirge
Cuid Uimhir :
SPB80N10L G
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 100V 80A TO-263
Sraith :
SIPMOS®
Stádas Cuid :
Discontinued at Digi-Key
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
80A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 58A, 10V
Vgs (ú) (Max) @ Id :
2V @ 2mA
Muirear Geata (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4540pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
250W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO263-3-2
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
An nuacht is déanaí
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