TPN2010FNH,L1Q Praghsáil (USD) [146815pcs Stoc]
- 1 pcs$0.26459
- 5,000 pcs$0.26327
- Cuid Uimhir:
- TPN2010FNH,L1Q
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET N-CH 250V 5.6A 8TSON.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Eagair, Diodes - Zener - Aonair, Túistéirí - TRIACanna, Trasraitheoirí - IGBTanna - Eagair, Túistéirí - DIACs, SIDACanna, Diodes - Rectifiers Bridge and Trasraitheoirí - Bipolar (BJT) - RF ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TPN2010FNH,L1Q electronic components. TPN2010FNH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN2010FNH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPN2010FNH,L1Q Tréithe Táirge
Cuid Uimhir :
TPN2010FNH,L1Q
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 250V 5.6A 8TSON
Sraith :
U-MOSVIII-H
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
250V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5.6A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
198 mOhm @ 2.8A, 10V
Vgs (ú) (Max) @ Id :
4V @ 200µA
Muirear Geata (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
600pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
700mW (Ta), 39W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-TSON Advance (3.3x3.3)
Pacáiste / Cás :
8-PowerVDFN
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