RF4E080BNTR Praghsáil (USD) [396411pcs Stoc]
- 1 pcs$0.10315
- 3,000 pcs$0.10264
- Cuid Uimhir:
- RF4E080BNTR
- Monaróir:
- Rohm Semiconductor
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 8A 8-HUML.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Modúil Tiomána Cumhachta, Diodes - Rectifiers Bridge, Diodes - Rectifiers - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - RF, Diodes - Rectifiers - Eagair and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Rohm Semiconductor RF4E080BNTR electronic components. RF4E080BNTR can be shipped within 24 hours after order. If you have any demands for RF4E080BNTR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RF4E080BNTR Tréithe Táirge
Cuid Uimhir :
RF4E080BNTR
Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N-CH 30V 8A 8-HUML
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
8A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
17.6 mOhm @ 8A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
14.5nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
660pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2W (Ta)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
HUML2020L8
Pacáiste / Cás :
8-PowerUDFN
An nuacht is déanaí
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