[3229pcs Stoc]
- Cuid Uimhir:
- IXTD1R4N60P 11
- Monaróir:
- IXYS
- Cur síos mionsonraithe:
- MOSFET N-CH 600V.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Diodes - Zener - Aonair, Diodes - Rectifiers - Eagair, Thyristors - SCRanna - Modúil, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers Bridge and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
- Buntáiste iomaíoch:
- We specialize in IXYS IXTD1R4N60P 11 electronic components. IXTD1R4N60P 11 can be shipped within 24 hours after order. If you have any demands for IXTD1R4N60P 11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD1R4N60P 11 Tréithe Táirge
Cuid Uimhir :
IXTD1R4N60P 11
Monaróir :
IXYS
Cur síos :
MOSFET N-CH 600V
Sraith :
PolarHV™
Stádas Cuid :
Obsolete
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs (ú) (Max) @ Id :
5.5V @ 25µA
Muirear Geata (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
140pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
50W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
Die
Pacáiste / Cás :
Die
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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