Vishay Semiconductor Diodes Division - NSB8JT-E3/81

KEY Part #: K6437522

NSB8JT-E3/81 Praghsáil (USD) [143207pcs Stoc]

  • 1 pcs$0.25828
  • 800 pcs$0.24191
  • 1,600 pcs$0.19098
  • 2,400 pcs$0.17825
  • 5,600 pcs$0.16976

Cuid Uimhir:
NSB8JT-E3/81
Monaróir:
Vishay Semiconductor Diodes Division
Cur síos mionsonraithe:
DIODE GEN PURP 600V 8A TO263AB. Rectifiers RECOMMENDED ALT 625-NSB8JT-E3
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Diodes - Rectifiers - Aonair, Diodes - Rectifiers Bridge, Trasraitheoirí - Bipolar (BJT) - RF, Diodes - RF, Trasraitheoirí - IGBTanna - Modúil and Thyristors - SCRanna ...
Buntáiste iomaíoch:
We specialize in Vishay Semiconductor Diodes Division NSB8JT-E3/81 electronic components. NSB8JT-E3/81 can be shipped within 24 hours after order. If you have any demands for NSB8JT-E3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSB8JT-E3/81 Tréithe Táirge

Cuid Uimhir : NSB8JT-E3/81
Monaróir : Vishay Semiconductor Diodes Division
Cur síos : DIODE GEN PURP 600V 8A TO263AB
Sraith : -
Stádas Cuid : Active
Cineál Dé-óid : Standard
Voltas - DC Droim ar ais (Vr) (Max) : 600V
Reatha - Meáncheartaithe (Io) : 8A
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.1V @ 8A
Luas : Standard Recovery >500ns, > 200mA (Io)
Am Téarnaimh Droim ar Ais (trr) : -
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 55pF @ 4V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pacáiste Gléas Soláthraithe : TO-263AB
Teocht Oibriúcháin - Acomhal : -55°C ~ 150°C

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