SQ1912EH-T1_GE3 Praghsáil (USD) [610452pcs Stoc]
- 1 pcs$0.06059
- 3,000 pcs$0.05168
- Cuid Uimhir:
- SQ1912EH-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2 N-CH 20V 800MA SC70-6.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Thyristors - SCRanna - Modúil, Diodes - Rectifiers - Aonair, Trasraitheoirí - JFETanna, Diodes - Zener - Sraith, Diodes - Rectifiers Bridge and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQ1912EH-T1_GE3 electronic components. SQ1912EH-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ1912EH-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ1912EH-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQ1912EH-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2 N-CH 20V 800MA SC70-6
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
800mA (Tc)
Rds On (Max) @ Id, Vgs :
280 mOhm @ 1.2A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
1.15nC @ 4.5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
75pF @ 10V
Cumhacht - Max :
1.5W
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
6-TSSOP, SC-88, SOT-363
Pacáiste Gléas Soláthraithe :
SC-70-6
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