SQ3425EV-T1_GE3 Praghsáil (USD) [366462pcs Stoc]
- 1 pcs$0.10093
- 3,000 pcs$0.09710
- Cuid Uimhir:
- SQ3425EV-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET P-CHANNEL 20V 7.4A 6TSOP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Transistors - Bipolar (BJT) - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - FETanna, MOSFETanna - Aonair, Thyristors - SCRanna, Trasraitheoirí - IGBTanna - Eagair, Modúil Tiomána Cumhachta and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQ3425EV-T1_GE3 electronic components. SQ3425EV-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ3425EV-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ3425EV-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQ3425EV-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET P-CHANNEL 20V 7.4A 6TSOP
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
P-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.4A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
2.5V, 4.5V
Rds On (Max) @ Id, Vgs :
60 mOhm @ 4.7A, 4.5V
Vgs (ú) (Max) @ Id :
1.4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
10.3nC @ 4.5V
Vgs (Max) :
±12V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
840pF @ 10V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
5W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
6-TSOP
Pacáiste / Cás :
SOT-23-6 Thin, TSOT-23-6
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