Infineon Technologies - IPB65R125C7ATMA1

KEY Part #: K6401861

IPB65R125C7ATMA1 Praghsáil (USD) [2903pcs Stoc]

  • 1,000 pcs$1.17120

Cuid Uimhir:
IPB65R125C7ATMA1
Monaróir:
Infineon Technologies
Cur síos mionsonraithe:
MOSFET N-CH TO263-3.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna, Diodes - Zener - Sraith, Trasraitheoirí - Cuspóir Speisialta, Trasraitheoirí - IGBTanna - Aonair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Zener - Aonair, Trasraitheoirí - JFETanna and Transistors - FETs, MOSFETs - RF ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB65R125C7ATMA1 Tréithe Táirge

Cuid Uimhir : IPB65R125C7ATMA1
Monaróir : Infineon Technologies
Cur síos : MOSFET N-CH TO263-3
Sraith : CoolMOS™ C7
Stádas Cuid : Discontinued at Digi-Key
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 650V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 18A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 125 mOhm @ 8.9A, 10V
Vgs (ú) (Max) @ Id : 4V @ 440µA
Muirear Geata (Qg) (Max) @ Vgs : 35nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1670pF @ 400V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 101W (Tc)
Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
Cineál Gléasta : Surface Mount
Pacáiste Gléas Soláthraithe : D²PAK (TO-263AB)
Pacáiste / Cás : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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