RS1E200BNTB Praghsáil (USD) [494560pcs Stoc]
- 1 pcs$0.08268
- 2,500 pcs$0.08227
- Cuid Uimhir:
- RS1E200BNTB
- Monaróir:
- Rohm Semiconductor
- Cur síos mionsonraithe:
- MOSFET N-CH 30V 20A 8HSOP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - Zener - Sraith, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Aonair and Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon ...
- Buntáiste iomaíoch:
- We specialize in Rohm Semiconductor RS1E200BNTB electronic components. RS1E200BNTB can be shipped within 24 hours after order. If you have any demands for RS1E200BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RS1E200BNTB Tréithe Táirge
Cuid Uimhir :
RS1E200BNTB
Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N-CH 30V 20A 8HSOP
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
20A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
3.9 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
59nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
3100pF @ 15V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
3W (Ta), 25W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
8-HSOP
Pacáiste / Cás :
8-PowerTDFN
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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