IRFD110PBF Praghsáil (USD) [100560pcs Stoc]
- 1 pcs$0.33222
- 10 pcs$0.29069
- 100 pcs$0.22437
- 500 pcs$0.16619
- 1,000 pcs$0.13295
- Cuid Uimhir:
- IRFD110PBF
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET N-CH 100V 1A 4-DIP.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Thyristors - SCRanna - Modúil, Transistors - FETs, MOSFETs - RF, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Túistéirí - TRIACanna, Diodes - Rectifiers - Eagair, Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair and Trasraitheoirí - Bipolar (BJT) - Sraitheanna ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix IRFD110PBF electronic components. IRFD110PBF can be shipped within 24 hours after order. If you have any demands for IRFD110PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD110PBF Tréithe Táirge
Cuid Uimhir :
IRFD110PBF
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET N-CH 100V 1A 4-DIP
Sraith :
-
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
540 mOhm @ 600mA, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
8.3nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
180pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
1.3W (Ta)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
4-DIP, Hexdip, HVMDIP
Pacáiste / Cás :
4-DIP (0.300", 7.62mm)
An nuacht is déanaí
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