BSZ110N06NS3GATMA1 Praghsáil (USD) [296365pcs Stoc]
- 1 pcs$0.12480
- Cuid Uimhir:
- BSZ110N06NS3GATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 60V 20A TSDSON-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Aonair, Thyristors - SCRanna, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - JFETanna, Diodes - Rectifiers - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors) and Thyristors - SCRanna - Modúil ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies BSZ110N06NS3GATMA1 electronic components. BSZ110N06NS3GATMA1 can be shipped within 24 hours after order. If you have any demands for BSZ110N06NS3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSZ110N06NS3GATMA1 Tréithe Táirge
Cuid Uimhir :
BSZ110N06NS3GATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 60V 20A TSDSON-8
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
20A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 20A, 10V
Vgs (ú) (Max) @ Id :
4V @ 23µA
Muirear Geata (Qg) (Max) @ Vgs :
33nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2700pF @ 30V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
2.1W (Ta), 50W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TSDSON-8
Pacáiste / Cás :
8-PowerVDFN
An nuacht is déanaí
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