Cur síos :
GAN TRANS 100V 550MOHM BUMPED DI
Teicneolaíocht :
GaNFET (Gallium Nitride)
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
1.7A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
5V
Rds On (Max) @ Id, Vgs :
550 mOhm @ 100mA, 5V
Vgs (ú) (Max) @ Id :
2.5V @ 80µA
Muirear Geata (Qg) (Max) @ Vgs :
0.12nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
14pF @ 50V
Díscaoileadh Cumhachta (Max) :
-
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
Die