IPG20N10S4L22AATMA1 Praghsáil (USD) [116120pcs Stoc]
- 1 pcs$0.31853
- 5,000 pcs$0.26582
- Cuid Uimhir:
- IPG20N10S4L22AATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET 2N-CH 100V 20A TDSON-8.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - FETanna, MOSFETanna - Aonair, Thyristors - SCRanna - Modúil, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Thyristors - SCRanna and Diodes - Rectifiers - Eagair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPG20N10S4L22AATMA1 electronic components. IPG20N10S4L22AATMA1 can be shipped within 24 hours after order. If you have any demands for IPG20N10S4L22AATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPG20N10S4L22AATMA1 Tréithe Táirge
Cuid Uimhir :
IPG20N10S4L22AATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET 2N-CH 100V 20A TDSON-8
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
100V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
20A
Rds On (Max) @ Id, Vgs :
22 mOhm @ 17A, 10V
Vgs (ú) (Max) @ Id :
2.1V @ 25µA
Muirear Geata (Qg) (Max) @ Vgs :
27nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1755pF @ 25V
Cumhacht - Max :
60W
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-PowerVDFN
Pacáiste Gléas Soláthraithe :
PG-TDSON-8-10
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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