Cuid Uimhir :
TSM60N1R4CH C5G
Monaróir :
Taiwan Semiconductor Corporation
Cur síos :
MOSFET N-CH 600V 3.3A TO251
Stádas Cuid :
Not For New Designs
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
600V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
3.3A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 2A, 10V
Vgs (ú) (Max) @ Id :
4V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
7.7nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
370pF @ 100V
Díscaoileadh Cumhachta (Max) :
38W (Tc)
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-251 (IPAK)
Pacáiste / Cás :
TO-251-3 Short Leads, IPak, TO-251AA