GeneSiC Semiconductor - GC08MPS12-252

KEY Part #: K6433100

GC08MPS12-252 Praghsáil (USD) [19779pcs Stoc]

  • 1 pcs$2.08368

Cuid Uimhir:
GC08MPS12-252
Monaróir:
GeneSiC Semiconductor
Cur síos mionsonraithe:
SIC DIODE 1200V 8A TO-252-2. Schottky Diodes & Rectifiers Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 8A TO-252-2
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - FETs, MOSFETs - RF, Trasraitheoirí - IGBTanna - Eagair, Modúil Tiomána Cumhachta, Trasraitheoirí - FETs, MOSFETs - Eagair, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Diodes - Rectifiers - Eagair, Túistéirí - DIACs, SIDACanna and Diodes - Rectifiers - Aonair ...
Buntáiste iomaíoch:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GC08MPS12-252 Tréithe Táirge

Cuid Uimhir : GC08MPS12-252
Monaróir : GeneSiC Semiconductor
Cur síos : SIC DIODE 1200V 8A TO-252-2
Sraith : -
Stádas Cuid : Active
Cineál Dé-óid : Silicon Carbide Schottky
Voltas - DC Droim ar ais (Vr) (Max) : 1200V
Reatha - Meáncheartaithe (Io) : 40A (DC)
Voltas - Ar Aghaidh (Vf) (Max) @ If : 1.8V @ 8A
Luas : No Recovery Time > 500mA (Io)
Am Téarnaimh Droim ar Ais (trr) : 0ns
Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 7µA @ 1200V
Capacitance @ Vr, F : 545pF @ 1V, 1MHz
Cineál Gléasta : Surface Mount
Pacáiste / Cás : TO-252-3, DPak (2 Leads + Tab), SC-63
Pacáiste Gléas Soláthraithe : TO-252-2
Teocht Oibriúcháin - Acomhal : -55°C ~ 175°C
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