IPN50R650CEATMA1 Praghsáil (USD) [301457pcs Stoc]
- 1 pcs$0.12270
- 3,000 pcs$0.10062
- Cuid Uimhir:
- IPN50R650CEATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CHANNEL 500V 9A SOT223.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - RF, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Transistors - Bipolar (BJT) - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - FETanna, MOSFETanna - Aonair and Diodes - Zener - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPN50R650CEATMA1 electronic components. IPN50R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN50R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN50R650CEATMA1 Tréithe Táirge
Cuid Uimhir :
IPN50R650CEATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CHANNEL 500V 9A SOT223
Sraith :
CoolMOS™ CE
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
500V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
9A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
13V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 1.8A, 13V
Vgs (ú) (Max) @ Id :
3.5V @ 150µA
Muirear Geata (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
342pF @ 100V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
5W (Tc)
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-SOT223
Pacáiste / Cás :
SOT-223-3
An nuacht is déanaí
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