Toshiba Semiconductor and Storage - TK22A10N1,S4X

KEY Part #: K6397593

TK22A10N1,S4X Praghsáil (USD) [65859pcs Stoc]

  • 1 pcs$0.65642
  • 50 pcs$0.52413
  • 100 pcs$0.45861
  • 500 pcs$0.33643
  • 1,000 pcs$0.26560

Cuid Uimhir:
TK22A10N1,S4X
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 100V 52A TO-220.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Diodes - RF, Trasraitheoirí - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Sraith, Diodes - Rectifiers Bridge, Modúil Tiomána Cumhachta and Transistors - Bipolar (BJT) - Aonair ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TK22A10N1,S4X electronic components. TK22A10N1,S4X can be shipped within 24 hours after order. If you have any demands for TK22A10N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK22A10N1,S4X Tréithe Táirge

Cuid Uimhir : TK22A10N1,S4X
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 100V 52A TO-220
Sraith : U-MOSVIII-H
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 100V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 22A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 13.8 mOhm @ 11A, 10V
Vgs (ú) (Max) @ Id : 4V @ 300µA
Muirear Geata (Qg) (Max) @ Vgs : 28nC @ 10V
Vgs (Max) : ±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 1800pF @ 50V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 30W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-220SIS
Pacáiste / Cás : TO-220-3 Full Pack

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