Cuid Uimhir :
APTC90H12T1G
Monaróir :
Microsemi Corporation
Cur síos :
MOSFET 4N-CH 900V 30A SP1
Cineál FET :
4 N-Channel (H-Bridge)
Drain to Voltage Source (Vdss) :
900V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
30A
Rds On (Max) @ Id, Vgs :
120 mOhm @ 26A, 10V
Vgs (ú) (Max) @ Id :
3.5V @ 3mA
Muirear Geata (Qg) (Max) @ Vgs :
270nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
6800pF @ 100V
Teocht Oibriúcháin :
-40°C ~ 150°C (TJ)
Cineál Gléasta :
Chassis Mount
Pacáiste Gléas Soláthraithe :
SP1