IPB019N06L3GATMA1 Praghsáil (USD) [39781pcs Stoc]
- 1 pcs$0.98287
- Cuid Uimhir:
- IPB019N06L3GATMA1
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 60V 120A TO263-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Zener - Aonair, Diodes - Zener - Sraith, Diodes - RF, Túistéirí - DIACs, SIDACanna, Transistors - Bipolar (BJT) - Sraitheanna, Réamh-c, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon and Thyristors - SCRanna ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPB019N06L3GATMA1 electronic components. IPB019N06L3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB019N06L3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB019N06L3GATMA1 Tréithe Táirge
Cuid Uimhir :
IPB019N06L3GATMA1
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 60V 120A TO263-3
Sraith :
OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
120A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 196µA
Muirear Geata (Qg) (Max) @ Vgs :
166nC @ 4.5V
Vgs (Max) :
±20V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
28000pF @ 30V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
250W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
D²PAK (TO-263AB)
Pacáiste / Cás :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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