Monaróir :
Renesas Electronics America Inc.
Cur síos :
MOSFET 2 N-CH 20V 10.1A 4QFN
Cineál FET :
2 N-Channel (Dual) Common Drain
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10.1A (Ta)
Rds On (Max) @ Id, Vgs :
13 mOhm @ 6.5A, 4.5V
Vgs (ú) (Max) @ Id :
1.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
11nC @ 4V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
900pF @ 10V
Teocht Oibriúcháin :
-55°C ~ 150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
4-QFN (2x2)