SQJ200EP-T1_GE3 Praghsáil (USD) [189774pcs Stoc]
- 1 pcs$0.19490
- 3,000 pcs$0.17541
- Cuid Uimhir:
- SQJ200EP-T1_GE3
- Monaróir:
- Vishay Siliconix
- Cur síos mionsonraithe:
- MOSFET 2N-CH 20V 20A/60A PPAK SO.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Trasraitheoirí - IGBTanna - Aonair, Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Diodes - Zener - Aonair, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Diodes - Rectifiers Bridge and Transistors - Bipolar (BJT) - Aonair ...
- Buntáiste iomaíoch:
- We specialize in Vishay Siliconix SQJ200EP-T1_GE3 electronic components. SQJ200EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ200EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ200EP-T1_GE3 Tréithe Táirge
Cuid Uimhir :
SQJ200EP-T1_GE3
Monaróir :
Vishay Siliconix
Cur síos :
MOSFET 2N-CH 20V 20A/60A PPAK SO
Sraith :
Automotive, AEC-Q101, TrenchFET®
Stádas Cuid :
Active
Cineál FET :
2 N-Channel (Dual)
Gné FET :
Standard
Drain to Voltage Source (Vdss) :
20V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
20A, 60A
Rds On (Max) @ Id, Vgs :
8.8 mOhm @ 16A, 10V
Vgs (ú) (Max) @ Id :
2V @ 250µA
Muirear Geata (Qg) (Max) @ Vgs :
18nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
975pF @ 10V
Cumhacht - Max :
27W, 48W
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
PowerPAK® SO-8 Dual
Pacáiste Gléas Soláthraithe :
PowerPAK® SO-8 Dual Asymmetric
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