Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N/P-CH 30V 5A/4.5A 8SOIC
Cineál FET :
N and P-Channel
Gné FET :
Logic Level Gate
Drain to Voltage Source (Vdss) :
30V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
5A, 4.5A
Rds On (Max) @ Id, Vgs :
51 mOhm @ 5A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
5.5nC @ 5V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
230pF @ 10V
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste / Cás :
8-SOIC (0.154", 3.90mm Width)
Pacáiste Gléas Soláthraithe :
8-SOP