TK7J90E,S1E Praghsáil (USD) [34636pcs Stoc]
- 1 pcs$1.30888
- 25 pcs$1.00143
- 100 pcs$0.90130
- 500 pcs$0.70102
- 1,000 pcs$0.58085
- Cuid Uimhir:
- TK7J90E,S1E
- Monaróir:
- Toshiba Semiconductor and Storage
- Cur síos mionsonraithe:
- MOSFET N-CH 900V TO-3PN.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Toilleadh Athrógach (Varicaps, Varactors), Transistors - Bipolar (BJT) - Aonair, Réamh-chlaon, Transistors - Bipolar (BJT) - Aonair, Thyristors - SCRanna, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - FETs, MOSFETs - Eagair, Diodes - Rectifiers - Aonair and Trasraitheoirí - Cuspóir Speisialta ...
- Buntáiste iomaíoch:
- We specialize in Toshiba Semiconductor and Storage TK7J90E,S1E electronic components. TK7J90E,S1E can be shipped within 24 hours after order. If you have any demands for TK7J90E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK7J90E,S1E Tréithe Táirge
Cuid Uimhir :
TK7J90E,S1E
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 900V TO-3PN
Sraith :
π-MOSVIII
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
900V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
2 Ohm @ 3.5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 700µA
Muirear Geata (Qg) (Max) @ Vgs :
32nC @ 10V
Vgs (Max) :
±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1350pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
200W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-3P(N)
Pacáiste / Cás :
TO-3P-3, SC-65-3
An nuacht is déanaí
B'fhéidir go mbeadh spéis agat freisin
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