IPD50N06S4L08ATMA2 Praghsáil (USD) [226427pcs Stoc]
- 1 pcs$0.16335
- 2,500 pcs$0.15525
- Cuid Uimhir:
- IPD50N06S4L08ATMA2
- Monaróir:
- Infineon Technologies
- Cur síos mionsonraithe:
- MOSFET N-CH 60V 50A TO252-3.
- Am luaidhe caighdeánach an déantóra:
- I stoc
- Seilfré:
- Bliain
- Slis Ó:
- Hong Cong
- RoHS:
- Modh íocaíochta:
-
- Bealach loingsithe:
- Catagóirí Teaghlaigh:
- Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - IGBTanna - Aonair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - IGBTanna - Eagair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Transistors - Bipolar (BJT) - Aonair, Trasraitheoirí - IGBTanna - Modúil, Diodes - Rectifiers - Eagair and Trasraitheoirí - Bipolar (BJT) - RF ...
- Buntáiste iomaíoch:
- We specialize in Infineon Technologies IPD50N06S4L08ATMA2 electronic components. IPD50N06S4L08ATMA2 can be shipped within 24 hours after order. If you have any demands for IPD50N06S4L08ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50N06S4L08ATMA2 Tréithe Táirge
Cuid Uimhir :
IPD50N06S4L08ATMA2
Monaróir :
Infineon Technologies
Cur síos :
MOSFET N-CH 60V 50A TO252-3
Sraith :
Automotive, AEC-Q101, OptiMOS™
Stádas Cuid :
Active
Cineál FET :
N-Channel
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
60V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
50A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
7.8 mOhm @ 50A, 10V
Vgs (ú) (Max) @ Id :
2.2V @ 35µA
Muirear Geata (Qg) (Max) @ Vgs :
64nC @ 10V
Vgs (Max) :
±16V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
4780pF @ 25V
Gné FET :
-
Díscaoileadh Cumhachta (Max) :
71W (Tc)
Teocht Oibriúcháin :
-55°C ~ 175°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
PG-TO252-3-11
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63
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