Vishay Semiconductor Diodes Division - GBU8K-5410E3/51

KEY Part #: K6541017

[12515pcs Stoc]


    Cuid Uimhir:
    GBU8K-5410E3/51
    Monaróir:
    Vishay Semiconductor Diodes Division
    Cur síos mionsonraithe:
    BRIDGE RECT 1PHASE 800V 3.9A GBU.
    Am luaidhe caighdeánach an déantóra:
    I stoc
    Seilfré:
    Bliain
    Slis Ó:
    Hong Cong
    RoHS:
    Modh íocaíochta:
    Bealach loingsithe:
    Catagóirí Teaghlaigh:
    Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Diodes - Rectifiers - Aonair, Transistors - Bipolar (BJT) - Aonair, Diodes - Rectifiers - Eagair, Trasraitheoirí - FETs, MOSFETs - Eagair, Trasraitheoirí - FETanna, MOSFETanna - Aonair, Trasraitheoirí - Neamhfheidhmiú Inchláraithe, Diodes - RF and Túistéirí - DIACs, SIDACanna ...
    Buntáiste iomaíoch:
    We specialize in Vishay Semiconductor Diodes Division GBU8K-5410E3/51 electronic components. GBU8K-5410E3/51 can be shipped within 24 hours after order. If you have any demands for GBU8K-5410E3/51, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GBU8K-5410E3/51 Tréithe Táirge

    Cuid Uimhir : GBU8K-5410E3/51
    Monaróir : Vishay Semiconductor Diodes Division
    Cur síos : BRIDGE RECT 1PHASE 800V 3.9A GBU
    Sraith : -
    Stádas Cuid : Obsolete
    Cineál Dé-óid : Single Phase
    Teicneolaíocht : Standard
    Voltas - Peak Reverse (Max) : 800V
    Reatha - Meáncheartaithe (Io) : 3.9A
    Voltas - Ar Aghaidh (Vf) (Max) @ If : 1V @ 8A
    Reatha - Sceitheadh ​​Droim ar Ais @ Vr : 5µA @ 800V
    Teocht Oibriúcháin : -55°C ~ 150°C (TJ)
    Cineál Gléasta : Through Hole
    Pacáiste / Cás : 4-SIP, GBU
    Pacáiste Gléas Soláthraithe : GBU

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