Cuid Uimhir :
TK10A80E,S4X
Monaróir :
Toshiba Semiconductor and Storage
Cur síos :
MOSFET N-CH 800V TO220SIS
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
800V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
10A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) :
10V
Rds On (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (ú) (Max) @ Id :
4V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
46nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
2000pF @ 25V
Díscaoileadh Cumhachta (Max) :
50W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Through Hole
Pacáiste Gléas Soláthraithe :
TO-220SIS
Pacáiste / Cás :
TO-220-3 Full Pack