Toshiba Semiconductor and Storage - TK39N60W5,S1VF

KEY Part #: K6416066

TK39N60W5,S1VF Praghsáil (USD) [11530pcs Stoc]

  • 1 pcs$3.08049
  • 30 pcs$2.52624
  • 120 pcs$2.27974
  • 510 pcs$1.91005
  • 1,020 pcs$1.66359

Cuid Uimhir:
TK39N60W5,S1VF
Monaróir:
Toshiba Semiconductor and Storage
Cur síos mionsonraithe:
MOSFET N-CH 600V 38.8A T0247.
Am luaidhe caighdeánach an déantóra:
I stoc
Seilfré:
Bliain
Slis Ó:
Hong Cong
RoHS:
Modh íocaíochta:
Bealach loingsithe:
Catagóirí Teaghlaigh:
Dáileoir Comhpháirteanna Leictreonacha is ea KEY Components Co, a thairgeann catagóirí táirgí lena n-áirítear: Trasraitheoirí - Bipolar (BJT) - RF, Diodes - Zener - Aonair, Diodes - Toilleadh Athrógach (Varicaps, Varactors), Modúil Tiomána Cumhachta, Trasraitheoirí - Bipolar (BJT) - Sraitheanna, Trasraitheoirí - IGBTanna - Eagair, Diodes - Zener - Sraith and Diodes - Rectifiers - Aonair ...
Buntáiste iomaíoch:
We specialize in Toshiba Semiconductor and Storage TK39N60W5,S1VF electronic components. TK39N60W5,S1VF can be shipped within 24 hours after order. If you have any demands for TK39N60W5,S1VF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK39N60W5,S1VF Tréithe Táirge

Cuid Uimhir : TK39N60W5,S1VF
Monaróir : Toshiba Semiconductor and Storage
Cur síos : MOSFET N-CH 600V 38.8A T0247
Sraith : DTMOSIV
Stádas Cuid : Active
Cineál FET : N-Channel
Teicneolaíocht : MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) : 600V
Reatha - Leanúnach Drain (Id) @ 25 ° C : 38.8A (Ta)
Voltas Céide (Max Rds On, Min Rds Ar) : 10V
Rds On (Max) @ Id, Vgs : 74 mOhm @ 19.4A, 10V
Vgs (ú) (Max) @ Id : 4.5V @ 1.9mA
Muirear Geata (Qg) (Max) @ Vgs : 135nC @ 10V
Vgs (Max) : ±30V
Toilleadh Ionchuir (Ciss) (Max) @ Vds : 4100pF @ 300V
Gné FET : -
Díscaoileadh Cumhachta (Max) : 270W (Tc)
Teocht Oibriúcháin : 150°C (TJ)
Cineál Gléasta : Through Hole
Pacáiste Gléas Soláthraithe : TO-247
Pacáiste / Cás : TO-247-3

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