Cuid Uimhir :
RCD075N19TL
Monaróir :
Rohm Semiconductor
Cur síos :
MOSFET N-CH 190V 7.5A CPT3
Stádas Cuid :
Not For New Designs
Teicneolaíocht :
MOSFET (Metal Oxide)
Drain to Voltage Source (Vdss) :
190V
Reatha - Leanúnach Drain (Id) @ 25 ° C :
7.5A (Tc)
Voltas Céide (Max Rds On, Min Rds Ar) :
4V, 10V
Rds On (Max) @ Id, Vgs :
336 mOhm @ 3.8A, 10V
Vgs (ú) (Max) @ Id :
2.5V @ 1mA
Muirear Geata (Qg) (Max) @ Vgs :
30nC @ 10V
Toilleadh Ionchuir (Ciss) (Max) @ Vds :
1100pF @ 25V
Díscaoileadh Cumhachta (Max) :
850mW (Ta), 20W (Tc)
Teocht Oibriúcháin :
150°C (TJ)
Cineál Gléasta :
Surface Mount
Pacáiste Gléas Soláthraithe :
CPT3
Pacáiste / Cás :
TO-252-3, DPak (2 Leads + Tab), SC-63